On the Resilience of RTL NN Accelerators: Fault Characterization and Mitigation

Machine Learning (ML) is making a strong resurgence in tune with the massive generation of unstructured data which in turn requires massive computational resources. Due to the inherently compute- and power-intensive structure of Neural Networks (NNs), hardware accelerators emerge as a promising solution. However, with technology node scaling below 10nm, hardware accelerators become more susceptible to faults, which in turn can impact the NN accuracy. In this paper, we study the resilience aspects of Register-Transfer Level (RTL) model of NN accelerators, in particular, fault characterization and mitigation. By following a High-Level Synthesis (HLS) approach, first, we characterize the vulnerability of various components of RTL NN. We observed that the severity of faults depends on both i) application-level specifications, i.e., NN data (inputs, weights, or intermediate), NN layers, and NN activation functions, and ii) architectural-level specifications, i.e., data representation model and the parallelism degree of the underlying accelerator. Second, motivated by characterization results, we present a low-overhead fault mitigation technique that can efficiently correct bit flips, by 47.3% better than state-of-the-art methods.Comment: 8 pages, 6 figure

Evaluating Built-in ECC of FPGA on-chip Memories for the Mitigation of Undervolting Faults

Voltage underscaling below the nominal level is an effective solution for improving energy efficiency in digital circuits, e.g., Field Programmable Gate Arrays (FPGAs). However, further undervolting below a safe voltage level and without accompanying frequency scaling leads to timing related faults, potentially undermining the energy savings. Through experimental voltage underscaling studies on commercial FPGAs, we observed that the rate of these faults exponentially increases for on-chip memories, or Block RAMs (BRAMs). To mitigate these faults, we evaluated the efficiency of the built-in Error-Correction Code (ECC) and observed that more than 90% of the faults are correctable and further 7% are detectable (but not correctable). This efficiency is the result of the single-bit type of these faults, which are then effectively covered by the Single-Error Correction and Double-Error Detection (SECDED) design of the built-in ECC. Finally, motivated by the above experimental observations, we evaluated an FPGA-based Neural Network (NN) accelerator under low-voltage operations, while built-in ECC is leveraged to mitigate undervolting faults and thus, prevent NN significant accuracy loss. In consequence, we achieve 40% of the BRAM power saving through undervolting below the minimum safe voltage level, with a negligible NN accuracy loss, thanks to the substantial fault coverage by the built-in ECC.Comment: 6 pages, 2 figure

Aggressive undervolting of FPGAs : power & reliability trade-offs

In this work, we evaluate aggressive undervolting, i.e., voltage underscaling below the nominal level to reduce the energy consumption of Field Programmable Gate Arrays (FPGAs). Usually, voltage guardbands are added by chip vendors to ensure the worst-case process and environmental scenarios. Through experimenting on several FPGA architectures, we con¿rm a large voltage guardband for several FPGA components, which in turn, delivers signi¿cant power savings. However, further undervolting below the voltage guardband may cause reliability issues as the result of the circuit delay increase, and faults might start to appear. We extensively characterize the behavior of these faults in terms of the rate, location, type, as well as sensitivity to environmental temperature, primarily focusing on FPGA on-chip memories, or Block RAMs (BRAMs). Understanding this behavior can allow to deploy ef¿cient mitigation techniques, and in turn, FPGA-based designs can be improved for better energy, reliability, and performance trade-offs. Finally, as a case study, we evaluate a typical FPGA-based Neural Network (NN) accelerator when the FPGA voltage is underscaled. In consequence, the substantial NN energy savings come with the cost of NN accuracy loss. To attain power savings without NN accuracy loss below the voltage guardband gap, we proposed an application-aware technique and we also, evaluated the built-in Error-Correcting Code (ECC) mechanism. Hence, First, we developed an application-dependent BRAMs placement technique that relies on the deterministic behavior of undervolting faults, and mitigates these faults by mapping the most reliability sensitive NN parameters to BRAM blocks that are relatively more resistant to undervolting faults. Second, as a more general technique, we applied the built-in ECC of BRAMs and observed a signi¿cant fault coverage capability thanks to the behavior of undervolting faults, with a negligible power consumption overhead.En este trabajo, evaluamos el reducir el voltaje en forma agresiva, es decir, bajar la tensión por debajo del nivel nominal para reducir el consumo de energía en Field Programmable Gate Arrays (FPGA). Por lo general, los vendedores de chips establecen margen de seguridad al voltaje para garantizar el funcionamiento de los mismos en el peor de los casos y en los peores escenarios ambientales. Mediante la experimentación en varias arquitecturas FPGA, confirmamos que hay un margen de seguridad de voltaje grande en varios de los componentes de la FPGA, que a su vez, nos ofrece ahorros de energía significativos. Sin embargo, un trabajar a un voltaje por debajo del margen de seguridad del voltaje puede causar problemas de confiabilidad a medida ya que aumenta el retardo del circuito y pueden comenzar a aparecer fallos. Caracterizamos ampliamente el comportamiento de estos fallos en términos de velocidad, ubicación, tipo, así como la sensibilidad a la temperatura ambiental, centrándonos principalmente en memorias internas de la FPGA, o Block RAM (BRAM). Comprender este comportamiento puede permitir el desarrollo de técnicas eficientes de mitigación y, a su vez, mejorar los diseños basados en FPGA para obtener ahorros en energía, una mayor confiabilidad y un mayor rendimiento. Finalmente, como caso de estudio, evaluamos un acelerador típico de Redes Neuronales basado en FPGA cuando el voltaje de la FPGA esta por debajo del nivel mínimo de seguridad. En consecuencia, los considerables ahorros de energía de la red neuronal vienen asociados con la pérdida de precisión de la red neuronal. Para obtener ahorros de energía sin una pérdida de precisión en la red neuronal por debajo del margen de seguridad del voltaje, proponemos una técnica que tiene en cuenta la aplicación, asi mismo, evaluamos el mecanismo integrado en las BRAMs de Error Correction Code (ECC). Por lo tanto, en primer lugar, desarrollamos una técnica de colocación de BRAM dependiente de la aplicación que se basa en el comportamiento determinista de las fallos cuando la FPGA funciona por debajo del margen de seguridad, y se mitigan estos fallos asignando los parámetros de la red neuronal más sensibles a producir fallos a los bloques BRAM que son relativamente más resistentes a los fallos. En segundo lugar, como técnica más general, aplicamos el ECC incorporado de los BRAM y observamos una capacidad de cobertura de fallos significativo gracias a las características de comportamiento de fallos, con una sobrecoste de consumo de energía insignificantePostprint (published version

HATCH: Hash Table Caching in Hardware for Efficient Relational Join on FPGA

In this paper we present HATCH, a novel hash join engine. We follow a new design point which enables us to effectively cache the hash table entries in fast BRAM resources, meanwhile supporting collision resolution in hardware. HATCH enables us to have the best of two worlds: (i) to use the full capacity of the DDR memory to store complete hash tables, and (ii) by employing a cache, to exploit the high access speed of BRAMs. We demonstrate the usefulness of our approach by running hash join operations from 5 TPCH benchmark queries and report speedups up to 2.8x over a pipeline-optimized baseline.The research leading to these results has received funding from the European Unions Seventh Framework Programme (FP7/2007-2013), for Advanced Analytics for Extremely Large European Databases (AXLE) project under grant agreement number 318633, and from the Ministry of Economy and Competitiveness of Spain under contract number TIN2012-34557.Postprint (author's final draft

On the Resilience of RTL NN Accelerators: Fault Characterization and Mitigation

Machine Learning (ML) is making a strong resurgence in tune with the massive generation of unstructured data which in turn requires massive computational resources. Due to the inherently compute and power-intensive structure of Neural Networks (NNs), hardware accelerators emerge as a promising solution. However, with technology node scaling below 10nm, hardware accelerators become more susceptible to faults, which in turn can impact the NN accuracy. In this paper, we study the resilience aspects of Register-Transfer Level (RTL) model of NN accelerators, in particular, fault characterization and mitigation. By following a High-Level Synthesis (HLS) approach, first, we characterize the vulnerability of various components of RTL NN. We observed that the severity of faults depends on both i) application-level specifications, i.e., NN data (inputs, weights, or intermediate) and NN layers and ii) architectural-level specifications, i.e., data representation model and the parallelism degree of the underlying accelerator. Second, motivated by characterization results, we present a low-overhead fault mitigation technique that can efficiently correct bit flips, by 47.3% better than state-of-the-art methods.We thank Pradip Bose, Alper Buyuktosunoglu, and Augusto Vega from IBM Watson for their contribution to this work. The research leading to these results has received funding from the European Union’s Horizon 2020 Programme under the LEGaTO Project (www.legato-project.eu), grant agreement nº 780681.Peer ReviewedPostprint (author's final draft

Experimental study of aggressive undervolting in FPGAs

In this work, we evaluate aggressive undervolting, i.e., voltage scaling below the nominal level to reduce the energy consumption of Field Programmable Gate Arrays (FPGAs). Usually, voltage guardbands are added by chip vendors to ensure the worst-case process and environmental scenarios. Through experimenting on several FPGA architectures, we measure this voltage guardband to be on average 39% of the nominal level, which in turn, delivers more than an order of magnitude power savings. However, further undervolting below the voltage guardband may cause reliability issues as the result of the circuit delay increase, i.e., start to appear faults. We extensively characterize the behavior of these faults in terms of the rate, location, type, as well as sensitivity to environmental temperature, with a concentration of on-chip memories, or Block RAMs (BRAMs). Finally, we evaluate a typical FPGA-based Neural Network (NN) accelerator under low-voltage BRAM operations. In consequence, the substantial NN energy savings come with the cost of NN accuracy loss. To attain power savings without NN accuracy loss, we propose a novel technique that relies on the deterministic behavior of undervolting faults and can limit the accuracy loss to 0.1% without any timing-slack overhea

Fault Characterization Through FPGA Undervolting

The power and energy efficiency of Field Programmable Gate Arrays (FPGAs) are estimated to be up to 20X less than Application Specific Integrated Circuits (ASICs). What is needed to close this gap is aggressive power/energy savings techniques. Such a potentially effective approach is undervolting, which can directly deliver an order of magnitude static and dynamic power savings. However, aggressive undervolting, without accompanying frequency scaling leads to timing related faults, potentially undermining the power savings. Understanding the behavior of these faults and efficiently mitigating them can deliver further power and energy savings in low-voltage designs. In this paper, we conduct a detailed analysis of undervolting FPGA on-chip memories (BRAMs). Through experimental analysis, we find that lowering the supply voltage until a certain conservative level, V min does not introduce any observable fault. For the studied platforms, we measure this voltage guardband gap to be 39% of the nominal level (V nom = 1V, V min = 0.61V). Further undervolting corrupts some of the data bits stored in BRAMs; however, it also reduces the BRAMs power consumption a further 36.1%. When the voltage is lowered below V min , the rate of these faults exponentially increases to 0.06%, by a fully non-uniform distribution over various BRAMs. This paper comprehensively analyzes the behavior of these faults, in terms of rate, type, location, and environmental temperature.The research leading to these results has received funding from the European Union’s Horizon 2020 Programme under the LEGaTO Project (www.legato-project.eu), grant agreement n◦ 780681.Peer ReviewedPostprint (author's final draft